FDZ191P p-channel 1.5v powertrench ? wl-csp mosfet ?2009 fairchild semiconductor corporation FDZ191P rev.f3 (w) www.fairchildsemi.com 1 FDZ191P p-channel 1.5v powertrench ? wl-csp mosfet -20v, -1a, 85m features max r ds(on) = 85m at v gs = -4.5v, i d = -1a max r ds(on) = 123m at v gs = -2.5v, i d = -1a max r ds(on) = 200m at v gs = -1.5v, i d = -1a occupies only 1.5 mm 2 of pcb area less than 50% of the area of 2 x 2 bga ultra-thin package: less than 0.65 mm height when mounted to pcb rohs compliant general description designed on fairchild's advanced 1.5v powertrench process with state of the art "low pitch" wlcsp packaging process, the FDZ191P minimizes both pcb space and r ds(on) . this advanced wlcsp mosfet embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r ds(on) . application battery management load switch battery protection mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking an d ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 8 v i d drain current -continuous (note 1a) -3 a -pulsed -15 p d power dissipation (note 1a) 1.9 w power dissipation (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 65 c/w r ja thermal resistance, junction to ambient (note 1b) 133 device marking device package reel size tape width quantity 1 FDZ191P wl-csp 7 8mm 5000 units pin 1 d s s d s g bottom top pin 1 s d g june 2009
FDZ191P p-channel 1.5v powertrench ? wl-csp mosfet FDZ191P rev.f3(w) www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = -250 a, v gs = 0v -20 v bv dss t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -12 mv/ c i dss zero gate voltage drain current v ds = -16v, v gs = 0v -1 a i gss gate to source leakage current v gs = 8v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -0.4 -0.6 -1.5 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25c 2 mv/c r ds(on) drain to source on resistance v gs = -4.5v, i d = -1a 67 85 m v gs = -2.5v, i d = -1a 85 123 v gs = -1.5v, i d = -1a 140 200 v gs = -4.5v, i d = -1a t j = 125c 87 123 i d(on) on to state drain current v gs = -4.5v, v ds = -5v -10 a g fs forward transconductance v ds = -5v, i d = -1a 7 s dynamic characteristics c iss input capacitance v ds = -10v, v gs = 0v, f = 1mhz 800 pf c oss output capacitance 155 pf c rss reverse transfer capacitance 90 pf r g gate resistance f = 1mhz 9 switching characteristics t d(on) turn-on delay time v dd = -10v, i d = -1a v gs = -4.5v, r gen = 6 11 20 ns t r rise time 10 20 ns t d(off) turn-off delay time 50 80 ns t f fall time 30 48 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = -10v i d = -1a 913nc q gs gate to source gate charge 1 nc q gd gate to drain miller charge 2 nc drain-source diode characteristics i s maximum continuous drain-source diode forward current -1.1 a v sd source to drain diode forward voltage v gs = 0v, i s = -1.1a (note 2) -0.7 -1.2 v t rr reverse recovery time i f = -1a, di/dt = 100a/ s 21 ns q rr reverse recovery charge 5 nc notes: 1: r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. the thermal resistance from the junction to the circuit board side of the solder ball, r jb is defined for reference. for r jc the thermal reference point for the case is defined as the top surface of the copper chip carrier. r jc and r jb are guaranteed by design while r ja is determined by the user's board design. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a. 65c/w when mounted on a 1 in 2 pad of 2 oz copper,1.5 x 1.5 x 0.062 thick pcb b. 133c/w when mounted on a minimum pad of 2 oz copper
FDZ191P p-channel 1.5v powertrench ? wl-csp mosfet FDZ191P rev.f3 (w) www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 v gs = -3.5v v gs = -4.5v pulse duration = 300 s duty cycle = 2.0%max v gs = -2.5v v gs = -1.5v v gs = -2.0v -i d , drain current (a) -v ds , drain to source voltage (v) on region characteristics figure 2. 0246810121416 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs = -4.5v pulse duration = 300 s duty cycle = 2.0%max normalized drain to source on-resistance -i d , drain current(a) v gs = -2.5v v gs = -2.0v v gs = -1.5v v gs = -3.5v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = -1a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 12345 40 80 120 160 200 240 pulse duration = 300 s duty cycle = 2.0%max t j = 125 o c t j = 25 o c i d = - 0.5a r ds(on) , drain to source on-resistance ( m ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.51.01.52.02.5 0 3 6 9 12 15 v dd = -5v pulse duration = 300 s duty cycle = 2.0%max t j = -55 o c t j = 25 o c t j = 125 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.21.4 1e-4 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 60 s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDZ191P p-channel 1.5v powertrench ? wl-csp mosfet FDZ191P rev.f3 (w) www.fairchildsemi.com 4 figure 7. 024681012 0 1 2 3 4 5 i d = -1a v dd = -15v v dd = -10v v dd = -5v q g , gate charge(nc) -v gs , gate to source voltage(v) gate charge characteristics figure 8. 0.1 1 10 100 1000 20 50 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 2000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t a , case temperature ( o c ) v gs = - 2.5v v gs = -4.5v r ja = 65 o c/w -i d , drain current (a) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature figure 10. 0.1 1 10 0.01 0.1 1 10 10s 80 dc 1s 100ms 10ms 1ms 100us single pulse t j = max rated r ja = 133 o c/w t a = 25 o c operation in this area may be limited by r ds(on) -v ds , drain to source voltage (v) -i d , drain current (a) 30 f o r w a r d b i a s s a f e operating area figure 11. single pulse maximum power dissipation 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 0.5 v gs = -10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 50 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a C 125 ----------------------- - typical characteristics t j = 25c unless otherwise noted
FDZ191P p-channel 1.5v powertrench ? wl-csp mosfet FDZ191P rev.f3 (w) www.fairchildsemi.com 5 figure 12. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a typical characteristics t j = 25c unless otherwise noted
FDZ191P p-channel 1.5v powertrench ? wl-csp mosfet FDZ191P rev.f3 (w) www.fairchildsemi.com 6
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wl-csp mosfet FDZ191P rev.f3 (w) www.fairchildsemi.com 7
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